ITA6V5B3_07 データシートの表示（PDF） - STMicroelectronics
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ITA6V5B3_07 Datasheet PDF : 8 Pages
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Characteristics
1
Characteristics
ITAxxB3
Table 1.
Symbol
Absolute ratings (Tamb = 25 °C)
Parameter
PPP Peak pulse power (8/20 µs)(1)
IPP Peak pulse current (8/20 µs)(1)
I2t
Wire I2t value(1)
Tj initial = Tamb
Tj initial = Tamb
Value
Unit
300
W
40
A
0.6
A2s
Tj
Maximum operating junction temperature
125
°C
Tstg Storage temperature range
-55 to +150
°C
TL Maximum lead temperature for soldering during 10 s
260
°C
1. For surges greater than the specified maximum value, the I/O will first present a short-circuit and after an open circuit
caused by the wire melting.
Table 2. Electrical characteristics (Tamb = 25 °C)
Symbol
Parameter
VRM Stand-off voltage
VBR Breakdown voltage
VCL Clamping voltage
IRM Leakage current
IPP Peak pulse current
αT Voltage temperature coefficient
VF
Forward voltage drop
C
Capacitance
I
IPP
IRM
V
VRM VCL
VBR
Order code
VBR
min.
(1)
@ IR
IRM @ VRM
max.
VCL @ IPP
8/20 µs
(1)
VCL @ IPP
max.
(1)
8/20 µs
αT
max.
C
max.
(2)
V
mA
µA
V
V
A
V
A
10-4/°C pF
ITA6V5B3
6.5
1
10
5
9.5
10
121
25
4
1100
ITA18B3
18
1
4
15
21
10
26
25
9
500
ITA25B3
25
1
4
24
31
10
36
25
12
420
1. Between I/O pin and ground.
2. Between two input pins at 0 V Bias, F = 1 MHz.
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