26NM60N_13 データシートの表示（PDF） - STMicroelectronics

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26NM60N_13

N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFETs in a TO-247 package

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STW26NM60N

(TCASE = 25 °C unless otherwise specified)

Symbol

Parameter

Table 5. On/off states

Test conditions

Drain-source

V(BR)DSS

breakdown voltage

Zero gate voltage

IDSS

drain current (VGS = 0)

IGSS

Gate-body leakage

current (VDS = 0)

VGS(th) Gate threshold voltage

Static drain-source on-

RDS(on) resistance

ID = 1 mA, VGS = 0

VDS = 600 V

VDS = 600 V, TC = 125 °C

VGS = ± 25 V

VDS = VGS, ID = 250 μA

VGS = 10 V, ID = 10 A

Min. Typ. Max. Unit

600

V

1 μA

100 μA

±0.1 μA

23 4V

0.135 0.165 Ω

Symbol

Parameter

Table 6. Dynamic

Test conditions

Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

- 1800 - pF

115 - pF

- 1.1 - pF

(1) Equivalent output

Coss eq. capacitance

VGS = 0, VDS = 0 to 480 V

- 310 - pF

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

Rg Gate input resistance

VDD = 480 V, ID = 20 A,

VGS = 10 V,

(see Figure 15)

f=1 MHz Gate DC Bias=0

Test signal level = 20 mV

open drain

- 60 - nC

- 8.5 - nC

- 30 - nC

- 2.8 - Ω

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS

4/13

DocID025246 Rev 1

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