BD237_07 データシートの表示（PDF） - STMicroelectronics

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BD237_07

NPN power transistors

STMicroelectronics 

BD235 BD237

2

Electrical characteristics

Electrical characteristics

(Tcase = 25°C; unless otherwise specified)

Table 3. Electrical characteristics

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = rated VCBO

VCB = rated VCBO TC= 150°C

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5V

Collector-emitter

IC = 100mA

VCEO(sus)(1) sustaining voltage

for BD235

60

(IB = 0)

for BD237

80

VCE(sat)(1)

Collector-emitter

saturation voltage

IC = 1A __ IB = 0.1A

VBE(1) Base-emitter voltage

IC = 1A ___ VCE = 2V

hFE(1)

DC current gain

IC = 150mA _ VCE = 2V

40

IC = 1A_

VCE = 2V

25

1. Pulsed duration = 300 ms, duty cycle ≥1.5%.

0.1 mA

2 mA

1 mA

V

V

0.6 V

1.3 V

3/9

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