BC618(2001) データシートの表示（PDF） - ON Semiconductor

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BC618
(Rev.:2001)

Darlington Transistors

ON Semiconductor 

Darlington Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Total Device Dissipation @ TA = 25°C

Derate above 25°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Symbol

VCEO

VCBO

VEBO

IC

PD

PD

TJ, Tstg

Value

55

80

12

1.0

625

5.0

1.5

12

–55 to +150

Symbol

RqJA

RqJC

Max

200

83.3

Unit

Vdc

Vdc

Vdc

Adc

mW

mW/°C

Watts

mW/°C

°C

Unit

°C/W

°C/W

BC618

1

2

3

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

COLLECTOR 1

BASE

2

EMITTER 3

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 10 mAdc, VBE = 0)

V(BR)CEO

55

—

—

Vdc

Collector–Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

V(BR)CBO

80

—

—

Vdc

Emitter–Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

12

—

—

Vdc

Collector Cutoff Current

(VCE = 60 Vdc, VBE = 0)

ICES

—

—

50

nAdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

ICBO

—

—

50

nAdc

Emitter Cutoff Current

(VEB = 10 Vdc, IC = 0)

IEBO

—

—

50

nAdc

© Semiconductor Components Industries, LLC, 2001

1

February, 2001 – Rev. 1

Publication Order Number:

BC618/D

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