PDTA123JMB データシートの表示（PDF） - NXP Semiconductors.

部品番号

コンポーネント説明

メーカー

PDTA123JMB

PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

NXP Semiconductors. 

NXP Semiconductors

PDTA123JMB

PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

-10

VI(on)

(V)

-1

006aac816

(1)

(2)

(3)

-1

VI(off)

(V)

006aac817

(1)

(2)

(3)

-10-1

-10-1

-1

-10

-102

IC (mA)

VCE = -0.3 V

(1) Tamb = -40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig 6. On-state input voltage as a function of collector

current; typical values

-10-1

-10-1

-1

-10

IC (mA)

VCE = -5 V

(1) Tamb = -40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig 7. Off-state input voltage as a function of collector

current; typical values

9

Cc

(pF)

6

006aac818

103

fT

(MHz)

006aac763

102

3

0

0

-10

-20

-30

-40

-50

VCB (V)

f = 1 MHz; Tamb = 25 °C

Fig 8. Collector capacitance as a function of

collector-base voltage; typical values

8. Test information

10

-10-1

-1

-10

-102

IC (mA)

VCE = -5 V; Tamb = 25 °C

Fig 9. Transition frequency as a function of collector

current; typical values of built-in transistor

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

PDTA123JMB

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 16 May 2012

© NXP B.V. 2012. All rights reserved.

6 of 11

Share Link: