AUIRFR4105Z データシートの表示（PDF） - Infineon Technologies

部品番号

コンポーネント説明

メーカー

AUIRFR4105Z

HEXFET® Power MOSFET

Infineon Technologies 

1000

100

10

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

1

0.1

00.1

4.5V

60µs PULSE WIDTH

Tj = 25°C

1

10

1100

VDS, Drain-to-Source Voltage (V)

Fig. 1 Typical Output Characteristics

AUIRFR/U4105Z

1000

100

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

1

00.1

4.5V

60µs PULSE WIDTH

Tj = 175°C

1

10

1100

VDS, Drain-to-Source Voltage (V)

Fig. 2 Typical Output Characteristics

1000

100

TJ = 175°C

10

TJ = 25°C

1

VDS = 25V

60µs PULSE WIDTH

0

4

5

6

7

8

9

10

VGS, Gate-to-Source Voltage (V)

Fig. 3 Typical Transfer Characteristics

3

30

TJ = 175°C

25

20

15

TJ = 25°C

10

5

VDS = 8.0V

380µs PULSE WIDTH

0

0

10

20

30

40

ID, Drain-to-Source Current (A)

Fig. 4 Typical Forward Trans conductance

Vs. Drain Current

2015-12-1

Share Link: