AUIRFR4105Z データシートの表示（PDF） - Infineon Technologies
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AUIRFR4105Z Datasheet PDF : 12 Pages
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AUIRFR/U4105Z
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
55 ––– ––– V VGS = 0V, ID = 250µA
––– 0.053 ––– V/°C Reference to 25°C, ID = 1mA
––– 19 24.5 m VGS = 10V, ID = 18A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
16 ––– ––– S VDS = 15V, ID = 18A
–––
–––
–––
–––
20
250
µA
VDS = 55V, VGS = 0V
VDS = 55V,VGS = 0V,TJ =125°C
–––
–––
––– 200
––– -200
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics
––– 18 27
ID = 18A
––– 5.3 ––– nC VDS = 44V
––– 7.0 –––
VGS = 10V
––– 10 –––
VDD = 28V
–––
–––
40
26
–––
–––
ns
ID = 18A
RG = 24.5
––– 24 –––
VGS = 10V
–––
–––
4.5
7.5
–––
–––
Between lead,
nH
6mm (0.25in.)
from package
and center of die contact
––– 740 –––
VGS = 0V
––– 140 –––
VDS = 25V
–––
–––
74
450
–––
–––
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
––– 110 –––
VGS = 0V, VDS = 44V ƒ = 1.0MHz
––– 180 –––
VGS = 0V, VDS = 0V to 44V
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Min.
–––
–––
Typ.
–––
–––
Max. Units
Conditions
30
120
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
––– ––– 1.3 V TJ = 25°C,IS = 18A, VGS = 0V
––– 19 29 ns TJ = 25°C ,IF = 18A, VDD = 28V
––– 14 21 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by TJmax , starting TJ = 25°C, L = 0.18mH, RG = 25, IAS = 18A, VGS =10V. Part not recommended for use above this value.
Pulse width 1.0ms; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population, starting TJ = 25°C, L = 0.18mH, RG = 25, IAS = 18A, VGS =10V.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R is measured at TJ approximately 90°C.
2
2015-12-1
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