CMPTA29(OLD) データシートの表示（PDF） - Central Semiconductor
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CMPTA29 Datasheet PDF : 2 Pages
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CMPTA29
HIGH VOLTAGE
NPN SILICON
DARLINGTON TRANSISTOR
SOT-23 CASE
MAXIMUM RATINGS: (TA=25oC)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCES
VEBO
IC
PD
TJ,Tstg
ΘJA
ELECTRICAL CHARACTERISTICS: (TA=25oC)
SYMBOL
ICES
ICBO
IEBO
BVCES
BVCBO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(ON)
TEST CONDITIONS
VCE=80V
VCB=80V
VBE=10V
IC=100µA
IC=100µA
IE=10µA
IC=10mA, IB=10µA
IC=100mA, IB=100mA
VCE=5.0V, IC=100mA
CentralTM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPTA29 is a Silicon NPN Darlington
Transistor manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for applications requiring
extremely high voltage and high gain.
Marking Code is C29.
100
100
12
500
350
-65 to +150
357
UNITS
V
V
V
mA
mW
oC
oC/W
MIN
MAX
UNITS
500
nA
100
nA
100
nA
100
V
100
V
12
V
1.2
V
1.5
V
2.0
V
202
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