SE1G データシートの表示（PDF） - Semtech Electronics LTD.
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SE1G Datasheet PDF : 2 Pages
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SE1A THRU SE1M
SURFACE MOUNT HIGH EFFICIENT RECTIFIER
Reverse Voltage - 50 to 1000 V
Forward Current - 1 A
Features
• High current capability
• High surge current capability
• High reliability
• Low reverse current
• Low forward voltage drop
• Fast switching for high efficiency
Mechanical Data
• Case: SMA (DO-214AC) molded plastic
• Epoxy: UL 94V-0 rate flame retardant
• Lead: Lead formed for surface mount
• Polarity: color band denotes cathode end
• Mounting position: Any
Maximum Ratings and Electrical Characteristics
Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Symbols SE1A SE1B SE1D SE1E SE1G SE1J SE1K SE1M Units
Maximum Recurrent Peak Reverse Voltage
VRRM 50 100 200 300 400 600 800 1000 V
Maximum RMS Voltage
VRMS 35 70 140 210 280 420 560 700 V
Maximum DC Blocking Voltage
VDC
50 100 200 300 400 600 800 1000 V
Maximum Average Forward Current Ta = 55 OC IF(AV)
1
A
Maximum Peak Forward Surge Current, 8.3 ms
Single Half Sine Wave Superimposed on Rated IFSM
30
A
Load (JEDEC method)
Maximum Forward Voltage at IF = 1 A
VF
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 OC
Ta = 100 OC
IR
Maximum Reverse Recovery Time 1)
trr
Typical Junction Capacitance 2)
CJ
1.1
5
50
50
50
1.7
2.2 V
µA
75
ns
pF
Junction and Storage Temperature Range
TJ, TS
- 65 to + 150
OC
1) Reverse recovery test conditions: IF = 0.5 A, IR = 1 A, Irr = 0.25 A
2) Measured at 1 MHz and applied reverse voltage of 4 V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 14/04/2008 E
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