SS8050 データシートの表示（PDF） - Yea Shin Technology Co., Ltd

部品番号

コンポーネント説明

メーカー

SS8050

TO-92 Plastic-Encapsulate Transistors

Yea Shin Technology Co., Ltd 

DATA SHEET

SEMICONDUCTOR

TO-92 Plastic-Encapsulate Transistors

FEATURES

Power dissipation

PCM : 1 W

:2W

(TA=25℃)

(TC=25℃)

SS8050

TRANSISTOR (NPN)

TO-92

1. EMITTER

2. BASE

3. COLLECTOR

MAXIMUM RATINGS* TA=25℃ unless otherwise noted

Symbol

Parameter

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current -Continuous

TJ, Tstg

Junction and Storage Temperature

Value

40

25

5

1500

-55-150

123

Units

V

V

V

mA

℃

*These ratings are limiting values above which the serviceability of any semiconductor device may be

impaired.

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage

V(BR)CBO Ic=100uA, IE=0

40

Collector-emitter breakdown voltage

V(BR)CEO Ic=0.1mA, IB=0

25

Emitter-base breakdown voltage

V(BR)EBO IE=100µA, IC=0

5

Collector cut-off current

ICBO

VCB=40V, IE=0

Emitter cut-off current

ICEO

VCE=20V, IE=0

Emitter cut-off current

IEBO

VEB=5V, IC=0

DC current gain

hFE(1) VCE=1V, IC=100mA

85

hFE(2) VCE=1V, IC=800mA

40

Collector-emitter saturation voltage

VCE(sat) IC=800mA, IB=80mA

Base-emitter saturation voltage

VBE(sat) IC=800mA, IB=80mA

Base-emitter voltage

VBE

VCE=1V, IC=10mA

Transition frequency

fT

VCE=10V, IC=50mA,f=30MHZ

100

V

V

V

0.1

µA

0.1

µA

0.1

µA

400

0.5

V

1.2

V

1

V

MHz

CLASSIFICATION OF hFE(2)

Rank

B

C

D

E

Range

85-160

120-200

160-300

300-400

http://www.yeashin.com

1

REV.02 20120705

Share Link: