Philips Semiconductors
NPN general purpose transistors
Product specification
BC846; BC847; BC848
400
handbook, halfpage
hFE
(1)
300
200
(2)
(3)
100
MGT723
0
10−1
1
10
102
103
IC (mA)
BC846A; VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.2 DC current gain as a function of collector
current; typical values.
1200
hanVdbBoEok, halfpage
(mV)
1000
(1)
800
(2)
600
(3)
400
MGT724
200
0
10−1
1
10
102
103
IC (mA)
BC846A; VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
103
handbook, halfpage
VCEsat
(mV)
MGT725
102
(1)
(2)
(3)
10
10−1
1
10
102
103
IC (mA)
BC846A; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
1200
hVanBdEbosoakt, halfpage
(mV)
1000
(1)
800
(2)
600
(3)
400
MGT726
200
0
10−1
1
10
102
103
IC (mA)
BC846A; IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Feb 06
5