Philips Semiconductors
NPN general purpose transistors
Product specification
BC846; BC847; BC848
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
BC846
BC847
BC848
collector-emitter voltage
BC846
BC847
BC848
emitter-base voltage
BC846; BC847
BC848
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
MIN.
MAX.
UNIT
−
80
V
−
50
V
−
30
V
−
65
V
−
45
V
−
30
V
−
6
V
−
5
V
−
100
mA
−
200
mA
−
200
mA
−
250
mW
−65
+150
°C
−
150
°C
−65
+150
°C
VALUE
500
UNIT
K/W
2004 Feb 06
3