Philips Semiconductors
Silicon diffused power transistors
Product specification
BUX84; BUX85
10
handbook, full pagewidth
Zth j−mb
(K/W)
1
δ=1
0.75
0.50
0.33
0.20
0.10
0.05
10−1
0.02
0.01
0
10−2
10−3
10−2
10−1
1
10
Fig.6 Transient thermal impedance.
MGB863
P
δ
=
tp
T
tp
t
T
102
tp (ms)
103
(1)
(2)
(3)
(4)
4
handbook, full pagewidth
VCEsat
(V)
3
MGB908
2
1
0
0
0.05
0.1
0.15
0.2
0.25
IB (A)
0.3
(1) IC = 0.3 A. (2) IC = 0.5 A. (3) IC = 0.7 A. (4) IC = 1 A.
Tj = 25 °C; solid line: typical values; dotted line: maximum values.
Fig.7 Collector-emitter saturation voltage as a function of base current; typical values.
1997 Aug 13
7