NXP Semiconductors
PUML1/DG
50 V, 200 mA NPN general-purpose transistor/100 mA NPN RET
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter
Conditions
Per transistor
Rth(j-a)
thermal resistance from junction in free air
to ambient
Per device
Rth(j-a)
thermal resistance from junction in free air
to ambient
Min Typ Max Unit
[1] -
-
625 K/W
[1] -
-
417 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
103
Zth(j-a)
(K/W)
102
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
10
0.01
0
006aab255
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration
PUML1_DG_1
Product data sheet
Rev. 01 — 14 July 2008
© NXP B.V. 2008. All rights reserved.
4 of 12