MJH16018 データシートの表示（PDF） - New Jersey Semiconductor
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MJH16018 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
MJ16018, MJH16018
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MJ16018
MJH1G018
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 2)
(IC = 100 mA, IB = 0)
Collector Cutoff Current
(VCEV = ISOOVdc, VflEloff) = 1.5 Vdc)
<VCEV = 1500 Vdc, VBE(off) - '-5 Vdc, TC = 100°C)
Collector Cutoff Current
(VCE = isoo Vdc, RBE = BO n, TC = ioo°ci
Emitter Cutoff Current
(VEB = 6.0Vdc, ic = o)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
ON CHARACTERISTICS (1)
Collector-Emitter Saturation Voltage
(1C = 5.0 Adc, IB = 1.0 Adc)
dC - 10Adc, IB = 4.0 Adc)
(1C = 6.0 Adc. IB = 1.0 Adc. TC = 100"C)
Base-Emitter Saturation Voltage
dc = 5.0 Adc, IB - 1.0 Adc)
dc = 5.0 Adc, IB = 1.0 Adc, TC = 100°C)
DC Current Gain
(1C = 5.0 Adc, VCE = 5 0 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
(vCB - 10vdc, IE = o,ftesl = 1.0 kHz)
SWITCHING CHARACTERISTICS
RMiithr* Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
Fall Time
dC = 5.0 Adc,
Vcc = 250 Vdc,
!B1 = 1.0 Adc,
PW = 30 us,
Duty Cycle « 2.0%)
(102 = 2.0 Adc,
RBZ = 3.o ni
(VgE(off) ~ 2 0 Vdc)
Inductive Lead (Table ^^
Storage Time
Fall Time
Crossover Time
Storage Time
Fall Time
(lc = 5.0 Adc,
IB1 = 1.0 Adc,
VBEIoff) - 2.0 Vdc,
VCE(pk) - «00 Vdc)
(Tj = 25°C)
(Tj = 100«C)
Crossover Time
(II PulM T«it: PW ~ 300 jd. Duty Cycll «• 2.0%.
Symbol
Min
TVP
Mw
Untt
vCEO(sus) 800
!CEV
-
'CER
—
!EBO
—
-
—
Vdc
mAdc
-
0.25
1.5
—
2.5 mAdc
—
1.0 mAdc
IS/b
RBSOA
VcE(sat)
-
vBE(sat)
-
"FE
7.0
Se 9 Figure 12
Se B Figure 13
Vdc
_
1.5
1.5
2.0
Vdc
-
1.5
1.5
—
—
—
Cob
—
—
400
Pf
<d
—
50
100
ns
tr
—
300
400
's
—
2000 3000
tf
—
900
1200
ts
_
1600
2400
tf
—
500
650
tSv
—
2000 3000
ns
tfi
—
200
400
tc
—
350
500
<sv
—
2600 3600
Ifi
_
280
460
<c
-
470
620
Quality Semi-Conductors
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