D42C5 データシートの表示（PDF） - New Jersey Semiconductor
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D42C5 Datasheet PDF : 2 Pages
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electrical Characteristics (Tc = 25° C) (unless otherwise specified)
CHARACTERISTIC
SYMBOL
WIN
off characteristics*11
Collector-Emitter Sustaining Voltage
(IC= 100mA) '
Collector Cutoff Current
(VCE = Rated VCES)
Emitter Cutoff Current
(VEB = 5V) ,
D42C1.2, 3
VCEO(SUS)
30
D42C4, 5, 6
45
D42C7, 8, 9
60
D42C10, 11,12
80
ICES
—
IEBO
—
second breakdown
| Second Breakdown with Base Forward Biased
FBSOA
on characteristics'11
DC Current Gain
(Ic = 200mA, VCE = 1V)
(lc = 1A, VCE= 1V).
<IC =2A,VCE=1V)
Collector-Emitter Saturation Voltage
(IC = 1 A, IB = 50mA)
Oc = 1A, IB = 100mA)
Base-Emitter Saturation Voltage
(IC = 1A, IB = 100mA)
D42O1 , 4 , 7 , 1 0
hFE
25
D42C2, 5, 8, 1 1
100
D42C3, 6, 9, 12
40
D42C1.4, 7. 10
hFE
10
gggJtU
20
20
D42C2, 5, 8, 1 1 vCE(sat)
—
D42C3, 6, 9, 12
D42C1.4, 7, 10 VcE(sat)
VBE(sat)
—
dynamic characteristics
Collector Capacitance
(VCB = 10V.f = 1MHz)
Current-Gain — Bandwidth Product
(I C = 20mA, VCE = 4V)
CCBO
—
tr
—
switching characteristics
Resistive Load
Delay Time +
Rise Time
IC = 1A, IB1 = IB2 = 0.1A.
Storage Time
Fall Time
VCG = 3°V. tp = 25 psec
(1) Pulse Test PW * 300ms Duty Cycle < 2%.
td + <r
—
ts
—
tf
—
TYP
MAX
—
—
—
10
—
100
SEEFIGURES3&4
—
220
120
—
—
0.5
—
0.5
0.5
—
1.3
—
100
50
—
100
—
500
—
75
—
UNIT
Volts
gA
M
~
Volts
Volts
Volts
PF
MHz
nS
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