BDT60B データシートの表示（PDF） - Inchange Semiconductor

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BDT60B

Silicon PNP Darlington Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistors

BDT60/A/B/C

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BDT60

Collector-Emitter

V(BR)CEO Breakdown Voltage

BDT60A

BDT60B

IC= -30mA; IB= 0

BDT60C

VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -6mA

VBE(on)

ICBO

Base-Emitter On Voltage

BDT60

Collector

Cutoff Current

BDT60A

BDT60B

BDT60C

BDT60

IC= -1.5A ; VCE= -3V

VCB= -60V; IE= 0

VCB= -30V; IE= 0; TJ=150℃

VCB= -80V; IE= 0

VCB= -40V; IE= 0; TJ=150℃

VCB= -100V; IE= 0

VCB= -50V; IE= 0; TJ=150℃

VCB= -120V; IE= 0

VCB= -60V; IE= 0; TJ=150℃

VCE= -30V; IB= 0

Collector

ICEO

Cutoff Current

BDT60A VCE= -40V; IB= 0

BDT60B VCE= -50V; IB= 0

BDT60C VCE= -60V; IB= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE

DC Current Gain

IC= -1.5A; VCE= -3V

VECF C-E Diode Forward Voltage

IE= -1.5A

Switching Times

ton

Turn-On Time

toff

Turn-Off Time

IC= -2A; IB1= -IB2= -8mA;

VBE(off)= 5V; RL= 20Ω

MIN TYP. MAX UNIT

-60

-80

V

-100

-120

-2.5 V

-2.5 V

-0.2

-2.0

-0.2

-2.0

mA

-0.2

-2.0

-0.2

-2.0

-0.5

-0.5

mA

-0.5

-0.5

-5 mA

750

-2.0 V

1.0

μs

4.5

μs

isc website：www.iscsemi.cn

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