BDT60A データシートの表示（PDF） - Inchange Semiconductor
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BDT60A Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistors
BDT60/A/B/C
DESCRIPTION
·DC Current Gain -hFE = 750(Min)@ IC= -1.5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A;
-100V(Min)- BDT60B; -120V(Min)- BDT60C
·Complement to Type BDT61/A/B/C
APPLICATIONS
·Designed for use in audio amplifier output stages , general
purpose amplifier and high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT60
-60
VCBO
Collector-Base
Voltage
BDT60A
-80
V
BDT60B
-100
BDT60C
-120
BDT60
-60
VCEO
Collector-Emitter
Voltage
BDT60A
-80
V
BDT60B
-100
BDT60C
-120
VEBO Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
IB
Base Current
Collector Power Dissipation
Ta=25℃
PC
Collector Power Dissipation
TC=25℃
Tj
Junction Temperature
-0.1
A
2
W
50
150
℃
Tstg
Storage Ttemperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-c
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX UNIT
2.5 ℃/W
62.5 ℃/W
isc website：www.iscsemi.cn
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