2N4209 データシートの表示（PDF） - New Jersey Semiconductor
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2N4209 Datasheet PDF : 2 Pages
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^e-inL-donductoi ^Pioduoti,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
2N4208
2N4209
PNP SILICON TRANSISTOR
JEDECTO-18CASE
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MAXIMUM RATINGS (TA=25°C)
SYMBOL
2N4209
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Power Dissipation (Tc=25°C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
VCBO
VCEO
VEBO
'c
PD
PD
TJ-Tstg
®JA
®JC
12
15
12
15
4.5
200
0.5
1.2
-65 to +200
350
146
ELECTRICAL CHARACTERISTICS O"A=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
2N42Q8
MIN MAX
2N4209
MIN MAX
'CES
ICES
ICES
"CES
BVCBO
BVCES
BV/CEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(SAT)
"FE
nFE
hFE
nFE
VCE=6.0V
VCE=6.0V,TA=125°C
vCE=8.ov
VCE=8.0V,TA=125'C
lc=100^
lc=100uA
lc=3.0mA
!E=100nA
lc=1.0mA, !B=100nA
'C=10mA- 'B=1-0mA
lc=50mA, !B=5.0mA
lc=1.0mAJB«100nA
lc=10mA, !B=1.0mA
lc=50mA, !B=5.0mA
VCE=0.5V,lc=1.0mA
VCE=0.3V, lc=10mA
VCE=0.3V, lc=10mA,TA=-55°C
VCE=I .0V, lc=50mA
10
5.0
12
12
12
4.5
0.13
0.15
0.50
0.80
0.78 0.95
1.5
15
30 120
12
30
10
5.0
15
15
15
4.5
0.15
0.18
0.60
0.80
0.78 0.95
1.5
35
50 120
20
40
V
V
V
mA
W
W
"C/W
°C/W
UNITS
nA
HA
nA
HA
V
V
V
V
V
V
V
V
V
V
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and packagedimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N J
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