STTH30R06D データシートの表示（PDF） - STMicroelectronics
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STTH30R06D Datasheet PDF : 8 Pages
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STTH30R06
Figure 3: Relative variation of thermal
impedance junction to case versus pulse
duration
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3 Single pulse
0.2
0.1
0.0
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
Figure 4: Peak reverse recovery current versus
dIF/dt (typical values)
IRM(A)
30
VR=400V
Tj=125°C
25
20
15
IF=2 x IF(AV)
IF=IF(AV)
IF=0.5 x IF(AV)
IF=0.25 x IF(AV)
10
5
dIF/dt(A/µs)
0
0
50 100 150 200 250 300 350 400 450 500
Figure 5: Reverse recovery time versus dIF/dt
(typical values)
trr(ns)
200
150
IF=2 x IF(AV)
VR=400V
Tj=125°C
IF=IF(AV)
IF=0.5 x IF(AV)
100
50
dIF/dt(A/µs)
0
0
200
400
600
800
1000
Figure 6: Reverse recovery charges versus
dIF/dt (typical values)
Qrr(µC)
3.0
VR=400V
Tj=125°C
2.5
2.0
IF=2 x IF(AV)
IF=IF(AV)
1.5
1.0
IF=0.5 x IF(AV)
0.5
0.0
0
dIF/dt(A/µs)
200
400
600
800
1000
Figure 7: Softness factor versus dIF/dt (typical
values)
S factor
0.6
0.5
IF≤2 x IF(AV)
VR=400V
Tj=125°C
0.4
0.3
0.2
0.1
0.0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 8: Relative variations of dynamic
parameters versus junction temperature
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
25
S factor
IF=IF(AV)
VR=400V
Reference: Tj=125°C
IRM
QRR
Tj(°C)
50
75
100
125
3/8
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