BUT11AF データシートの表示（PDF） - Philips Electronics
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BUT11AF Datasheet PDF : 8 Pages
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUT11AF
Fig.11. Typical base-emitter and collector-emitter saturation voltages.
VBEsat = f(IC); VCEsat = f(IC); IC/IB = 5
August 1997
Fig.12. Collector-emitter saturation voltage. Solid lines = typ values,
dotted lines = max values. VCEsat = f(IB); parameter IC
5
Rev 1.000
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