BUT11AF データシートの表示（PDF） - Philips Electronics
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BUT11AF Datasheet PDF : 8 Pages
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUT11AF
100 h FE
10
BUT11AX
5V
1V
1
0.01
0.1
1
10
100
IC / A
Fig.9. Typical DC current gain.
hFE = f(IC); parameter VCE
IC / A
100
ICM max
10
IC max
= 0.01
II
(1)
1
tp =
10 us
100 us
1 ms
10 ms
0.1
I
(2)
500 ms
DC
III
0.01
1
10
100
1000
VCE / V
Fig.10. Forward bias safe operating area. Ths ≤ 25 ˚C
(1) Ptot max and Ptot peak max lines.
(2) Second breakdown limits.
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
III Extension during turn-on in single
transistor converters provided that
RBE ≤ 100 Ω and tp ≤ 0.6 µs.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of the
envelope.
August 1997
4
Rev 1.000
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