MCR12DSM MCR12DSN
W ELECTRICAL CHARACTERISTICS (TJ = 25°C; RGK = 1.0 K unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
Peak Reverse Gate Blocking Voltage
m (IGR = 10 A)
Peak Forward Blocking Current
Peak Reverse Blocking Current
(VAK = Rated VDRM or VRRM) (1)
Peak Reverse Gate Blocking Current
(VGR = 10 V)
Peak On–State Voltage (2)
(ITM = 24 A)
Gate Trigger Current (Continuous dc) (3)
W (VD = 12 V, RL = 100 , TJ = 25°C)
W (VD = 12 V, RL = 100 , TJ = –40°C)
Gate Trigger Voltage (Continuous dc)
W (VD = 12 V, RL = 100 , TJ = 25°C)
W (VD = 12 V, RL = 100 , TJ = –40°C)
W (VD = 12 V, RL = 100 , TJ = 110°C)
Holding Current
(VD = 12 V, I(init) = 200 mA, TJ = 25°C)
(VD = 12 V, I(init) = 200 mA, TJ = –40°C)
Latching Current
(VD = 12 V, IG = 2.0 mA, TJ = 25°C)
(VD = 12 V, IG = 2.0 mA, TJ = –40°C)
DYNAMIC CHARACTERISTICS
TJ = 25°C
TJ = 110°C
VGRM
IDRM
IRRM
IRGM
VTM
IGT
VGT
IH
IL
Volts
10
12.5
18
mA
—
—
10
—
—
500
mA
—
—
1.2
Volts
—
1.4
2.1
mA
5.0
12
200
—
—
300
Volts
0.45
0.65
1.0
—
—
1.5
0.2
—
—
mA
0.5
1.0
6.0
—
—
10
mA
0.5
1.0
6.0
—
—
10
Characteristics
Symbol
Min
Typ
Max
Unit
Total Turn–On Time
W W (Source Voltage = 12 V, RS = 6.0 K , IT = 16 A(pk), RGK = 1.0 K )
m (VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 s)
tgt
ms
—
2.0
5.0
Critical Rate of Rise of Off–State Voltage
dv/dt
V/ms
W (VD = 0.67 X Rated VDRM, Exponential Waveform,
RGK = 1.0 K , TJ = 110°C)
2.0
10
—
W (1) Ratings apply for negative gate voltage or RGK = 1.0 K . Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
(2) Pulse Test; Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
(3) Does not include RGK current.
2
Motorola Thyristor Device Data