MAX77178 データシートの表示（PDF） - Maxim Integrated

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MAX77178

High-Bandwidth LTE/WCDMA PA Power Management ICs in a 1.75mm x 1.4mm, 0.4mm Pitch WLP

Maxim Integrated 

MAX77178 / MAX77179

High-Bandwidth LTE/WCDMA PA Power Management ICs

in a 1.75mm x 1.4mm, 0.4mm Pitch WLP

ELECTRICAL CHARACTERISTICS (continued)

(VIN1 = VIN2 = VIN3 = 3.7V, VPGND = VAGND = 0V, L = 0.47µH, COUT = 4.7µF, TA = -40°C to +85°C. Typical values are at

TA = +25°C, unless otherwise noted.) (Note 3)

PARAMETER

CONDITIONS

MIN TYP MAX UNITS

Output Transition Time (MAX77179)

Rise time when VOUT transitions from 0.5V to 3.4V,

IOUT = 1A, COUT = 4.7FF, L = 0.47FH

0.33

V/Fs

Output Transition Time (MAX77178)

Rise time when VOUT transitions from 0.8V to 3.4V,

IOUT = 500mA, COUT = 4.7FF, L = 0.47FH

0.33

V/Fs

Maximum Output Current

1

A

High-Side Current-Limit Threshold

Low-Side Current-Limit Threshold

1.2

2.0

A

0.8

1.65

A

Low-Side Negative Current-Limit

Threshold

0.7

1.8

A

Low-Side Zero-Cross Threshold

40

mA

VOUT > 1.6V,

VMODE_SEL = VIN3

90

160

1V P VOUT P 1.6V,

VMODE_SEL = VIN3

135

LX High-Side On-Resistance

IN1/IN2 to LX,

ILX = -200mA

VOUT < 1V,

VMODE_SEL = VIN3

192

mI

VOUT > 1.8V,

VMODE_SEL = VAGND

135

VOUT P 1.8V,

VMODE_SEL = VAGND

360

VOUT > 1.6V,

VMODE_SEL = VIN3

75

130

1V P VOUT P 1.6V,

VMODE_SEL = VIN3

110

LX Low-Side On-Resistance

LX to PGND,

ILX = -200mA

VOUT < 1V,

VMODE_SEL = VIN3

150

mI

VOUT > 1.8V,

VMODE_SEL = VAGND

110

VOUT P 1.8V,

VMODE_SEL = VAGND

290

LX Leakage Current

Efficiency

VIN_ = VLX = 5.5V,

VEN = 0V

TA = +25NC

TA = +85NC

VIN1 = 3.6V, VOUT = 0.7V, IOUT = 16mA

VIN1 = 3.6V, VOUT = 1.3V, IOUT = 50mA

VIN1 = 3.6V, VOUT = 2.2V, IOUT = 300mA

-2.0 0.03 +2.0

FA

0.24

68

80

%

89

VIN1 = 3.6V, VOUT = 3.0V, IOUT = 500mA

93

Maxim Integrated

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