NXP Semiconductors
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Symbol
S1
G1
D2
S2
G2
D1
Description
source 1
gate 1
drain 2
source 2
gate 2
drain 1
Simplified outline Graphic symbol
654
1
6
2
5
123
3
4
017aaa055
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
2N7002BKV -
plastic surface-mounted package; 6 leads
4. Marking
Table 4. Marking codes
Type number
2N7002BKV
Marking code
ZG
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
VDS
drain-source voltage
Tamb = 25 °C
-
VGS
gate-source voltage
Tamb = 25 °C
-
ID
drain current
VGS = 10 V
[1]
Tamb = 25 °C
-
Tamb = 100 °C
-
IDM
peak drain current
Tamb = 25 °C;
-
single pulse; tp ≤ 10 μs
Version
SOT666
Max Unit
60
V
±20
V
340
mA
240
mA
1.2
A
2N7002BKV
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 September 2010
© NXP B.V. 2010. All rights reserved.
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