KBJ602G データシートの表示（PDF） - Vishay Semiconductors

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KBJ602G

6.0A Glass Passivated Bridge Rectifier

Vishay Semiconductors 

KBJ6005G–KBJ610G

Vishay Lite–On Power Semiconductor

6.0A Glass Passivated Bridge Rectifier

Features

D Glass passivated die construction

D High case dielectric strength of 1500VRMS

D Low reverse leakage current

D Surge overload rating to 170A peak

D Ideal for printed circuit board applications

D Plastic material – UL Recognition flammability

classification 94V–0

14 413

D This series isUL listed under recognized

component index, file number E95060

Absolute Maximum Ratings

Tj = 25_C

Parameter

Test Conditions

Type

Symbol Value

Unit

Repetitive peak reverse voltage

=Working peak reverse voltage

=DC Blocking voltage

KBJ6005G VRRM

50

V

KBJ601G =VRWM

100

V

KBJ602G =VR

200

V

KBJ604G

400

V

KBJ606G

600

V

KBJ608G

800

V

KBJ610G

1000

V

Peak forward surge current

Average forward current

TC=110°C

Junction and storage temperature range

IFSM

170

A

IFAV

6

A

Tj=Tstg –65...+150 °C

Electrical Characteristics

Tj = 25_C

Parameter

Test Conditions

Forward voltage

Reverse current

I2t Rating for fusing

IF=3A

TC=25°C

TC=125°C

Diode capacitance

Thermal resistance

junction to case

VR=4V, f=1MHz

mounted on

75x75x1.6mm aluminum plate

Type Symbol Min Typ Max Unit

VF

1V

IR

5 mA

IR

500 mA

I2t

120 A2s

CD

RthJC

80

pF

6

K/W

Rev. A2, 24-Jun-98

1 (4)

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