2SB1020 データシートの表示（PDF） - Inchange Semiconductor

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2SB1020

Silicon PNP Darlingtion Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlingtion Power Transistor

2SB1020

DESCRIPTION

·High DC C urrent Gain-

: hFE= 2000(Min.)@IC= -3A

·Low Collector Saturation Voltage-

: VCE(sat)= -1.5V(Max)@IC= -3A

·Good Linearity of hFE

·Complement to Type 2SD1415

APPLICATIONS

·High power switching applications.

·Hammer drive, pulse motor drive applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

-100

V

VCEO Collector-Emitter Voltage

-100

V

VEBO Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-7

A

IB

Base Current-Continuous

Collector Power Dissipation

@ Ta=25℃

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

-0.2

A

2

W

30

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc website：www.iscsemi.cn

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