SKB15N60 データシートの表示（PDF） - Infineon Technologies

部品番号

コンポーネント説明

メーカー

SKB15N60

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKP15N60, SKB15N60

SKW15N60

25V

1nF

20V

Ciss

15V

120V

480V

100pF

10V

5V

Coss

Crss

0V

0nC

25nC 50nC 75nC 100nC

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC = 15A)

25µs

10pF

0V

10V

20V

30V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a

function of collector-emitter voltage

(VGE = 0V, f = 1MHz)

250A

20µs

200A

15µs

150A

10µs

100A

5µs

50A

0µs

10V 11V 12V 13V 14V 15V

VGE, GATE-EMITTER VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(VCE = 600V, start at Tj = 25°C)

0A

10V 12V 14V 16V 18V 20V

VGE, GATE-EMITTER VOLTAGE

Figure 20. Typical short circuit collector

current as a function of gate-emitter voltage

(VCE ≤ 600V, Tj = 150°C)

8

Jul-02

Share Link: