S9011LT1-SOT-23 データシートの表示（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd

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S9011LT1-SOT-23

SOT-23 Plastic -Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

S9011LT1 TRANSISTOR（ NPN ）

FEATURES

Power dissipation

PCM : 0.2

W（Tamb=25℃）

Collector current

ICM : 0.03 A

Collector-base voltage

V(BR)CBO : 30

V

Operating and storage junction temperature range

TJ，Tstg: -55℃ to +150

SOT— 23

1. BASE

2. EMITTER

3. COLLECTOR

２．４

１．３

Unit : mm

ELECTRICAL CHARACTERISTICS（Tamb=25℃

Parameter

Symbol

unless otherwise specified）

Test conditions

MIN

TYP

Collector-base breakdown voltage

V(BR)CBO Ic= 100μA， IE=0

30

Collector-emitter breakdown voltage

V(BR)CEO Ic= 0.1m A， IB=0

20

Emitter-base breakdown voltage

V(BR)EBO IE=100μA， IC=0

4

Collector cut-off current

ICBO

VCB=16 V , IE=0

Collector cut-off current

ICEO

VCE=16V , IB=0

Emitter cut-off current

IEBO

VEB= 3.5V , IC=0

DC current gain

hFE(1)

VCE=5V, IC= 1m A

70

Collector-emitter saturation voltage

VCE(sat) IC=10 mA, IB= 1m A

Base-emitter saturation voltage

Transition frequency

VBE(sat) IC=10 mA, IB= 1m A

VCE=5V, IC= 1mA

fT

150

f=30MHz

MAX UNIT

V

V

V

0.1

μA

0.1

μA

0.1

μA

200

0.3

V

1

V

MHz

DEVICE MARKING:

S9011LT1= 1T

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