SVF8N60F データシートの表示（PDF） - Silan Microelectronics
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SVF8N60F Datasheet PDF : 8 Pages
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SVF8N60T/F_Datasheet
8A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF8N60T/F is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
F-CellTM structure VDMOS technology. The improved planar
stripe cell and the improved guarding ring terminal have been
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 8A,600V,RDS(on)(typ.)=0.96Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF8N60T
SVF8N60F
Package
TO-220-3L
TO-220F-3L
Marking
SVF8N60T
SVF8N60F
Material
Pb free
Pb free
packing
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HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.3
2012.06.15
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