11N40 データシートの表示（PDF） - Unisonic Technologies
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11N40 Datasheet PDF : 6 Pages
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11N40
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS =0 V, ID =250 µA
400
V
Zero Gate Voltage Drain Current
IDSS
VDS =400V, VGS =0 V
VDS =320V, TC =125°C
1
µA
10
Gate-Body Leakage Current
IGSS VDS =0 V, VGS = ±30 V
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID =250 µA, Referenced to25°C
ON CHARACTERISTICS
±100 nA
0.42
mV/℃
Gate Threshold Voltage
VGS(TH) VDS =VGS, ID =250 µA
2.0
4.0 V
Static Drain-Source On-Resistance
RDS(ON) VGS = 10 V, ID = 5.7 A
0.42 0.52 Ω
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
CISS
COSS
VDS =25V, VGS =0V, f=1MHz
1100 1400
180 240 pF
Reverse Transfer Capacitance
CRSS
20 30
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
30 70
Turn-ON Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=200V, ID=11.4A,
RGEN =25Ω(Note 1, 2)
100 210 ns
60 130
Turn-OFF Fall-Time
tF
60 130
Total Gate Charge
Gate Source Charge
Gate Drain Charge
QG
QGS
VDS =320V, VGS =10V,
ID =11.4A (Note 1, 2)
QGD
27 35
7.3
nC
12.3
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD IS=11.4 A,VGS=0V
1.5 V
Maximum Continuous Drain-Source
Diode Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
11.4
A
46
Reverse Recovery Time
Reverse Recovery Charge
trr
VGS = 0V, dIF /dt = 100 A/ s,
QRR IS =11.4A (Note 1)
240
ns
1.8
µC
Notes: 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
2. Independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-219.D
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