AT45DB641E データシートの表示（PDF） - Unspecified
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AT45DB641E Datasheet PDF : 71 Pages
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Description
The AT45DB641E is a 1.7V minimum, serial-interface sequential access Flash memory ideally suited for a wide variety of
digital voice, image, program code, and data storage applications. The AT45DB641E also supports the RapidS serial
interface for applications requiring very high speed operation. Its 69,206,016 bits of memory are organized as 32,768
pages of 256 bytes or 264 bytes each. In addition to the main memory, the AT45DB641E also contains two SRAM
buffers of 256/264 bytes each. Interleaving between both buffers can dramatically increase a system's ability to write a
continuous data stream. In addition, the SRAM buffers can be used as additional system scratch pad memory, and
E2PROM emulation (bit or byte alterability) can be easily handled with a self-contained three step read-modify-write
operation.
Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the
DataFlash® uses a serial interface to sequentially access its data. The simple sequential access dramatically reduces
active pin count, facilitates simplified hardware layout, increases system reliability, minimizes switching noise, and
reduces package size. The device is optimized for use in many commercial and industrial applications where
high-density, low-pin count, low-voltage, and low-power are essential.
To allow for simple in-system re-programmability, the AT45DB641E does not require high input voltages for
programming. The device operates from a single 1.7V to 3.6V power supply for the erase and program and read
operations. The AT45DB641E is enabled through the Chip Select pin (CS) and accessed via a 3-wire interface consisting
of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK).
All programming and erase cycles are self-timed.
1. Pin Configurations and Pinouts
Figure 1-1. Pinouts
8-lead SOIC
Top View
8-pad UDFN
Top View
8-ball UBGA
Top View
SI 1
SCK 2
RESET 3
CS 4
8 SO
7 GND
6
VCC
5 WP
SI 1
SCK 2
RESET 3
CS 4
8 SO
7 GND
6 VCC
5 WP
SCK GND VCC
CS
NC
WP
SO
SI
RST
Note:
1. The metal pad on the bottom of the DFN package is not internally connected to a voltage potential.
This pad can be a “no connect” or connected to GND. Care must be taken to avoid the Metal Pad shorting
on PCB tracks.
AT45DB641E
2
DS-45DB641E-027E–DFLASH–1/2014
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