2SD970 データシートの表示（PDF） - SavantIC Semiconductor

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2SD970

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD970

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;RBE=0

V(BR)EBO Emitter-base breakdown voltage

IE=50mA ; IC=0

VCEsat-1 Collector-emitter saturation voltage IC=4A ;IB=8mA

VCEsat-2 Collector-emitter saturation voltage IC=8A ;IB=80mA

VBEsat-1 Base-emitter saturation voltage

IC=4A ;IB=8mA

VBEsat-2 Base-emitter saturation voltage

IC=8A ;IB=80mA

ICBO

Collector cut-off current

VCB=120V; IE=0

ICEO

Collector cut-off current

hFE

DC current gain

Switching times

VCE=100V; RBE=@

IC=4A ; VCE=3V

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=4A ;IB1=-IB2=8mA

MIN TYP. MAX UNIT

120

V

7

V

1.5

V

3.0

V

2.0

V

3.5

V

100

µA

10

µA

1000

20000

0.4

µs

5.4

µs

1.1

µs

2

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