MF35-1200 データシートの表示（PDF） - Dynex Semiconductor

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MF35-1200

Fast Recovery Diode

Dynex Semiconductor 

Replaces March 1998 version, DS4625-3.1

APPLICATIONS

s Inverse, Parallel Or Series Connected Diode

s Power Supplies

s High Frequency Applications

FEATURES

s Glass Passivation

s High Voltage Capability

s Fast Recovery Characteristics

MF35

MF35

Fast Recovery Diode

DSDS4625-4.0 January 2000

KEY PARAMETERS

VRRM

IF(AV)

IFSM

Qr

trr

1200V

40A

400A

10µC

0.2ns

VOLTAGE RATINGS

Type Number

MF35 - 1200

MF35 - 1000

MF35 - 800

MF35 - 600

Repetitive Peak

Reverse Voltage

V

RRM

V

1200

1000

800

600

Conditions

V = V +100V

RSM

RRM

Lower voltage grades available.

For stud anode add suffix 'R' to type number. e.g. MF35-1200R.

Outline type code: DO5.

See Package Details for further information.

CURRENT RATINGS

Symbol

IF(AV)

I

F(RMS)

IF

Parameter

Mean forward current

RMS value

Continuous (direct) forward current

Conditions

Half sine wave resistive load, T = 65oC

case

Tcase = 65oC

Tcase = 65oC

Max.

40

63

50

Units

A

A

A

1/8

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