4926N データシートの表示（PDF） - ON Semiconductor

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4926N

30 V, 44 A, Single N-Channel, SO-8 FL

ON Semiconductor 

NTMFS4926N

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min Typ Max Unit

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

td(ON)

Rise Time

tr

Turn−Off Delay Time

td(OFF)

Fall Time

tf

DRAIN−SOURCE DIODE CHARACTERISTICS

VGS = 10 V, VDS = 15 V,

ID = 15 A, RG = 3.0 W

6.6

31.8

ns

18.3

4.0

Forward Diode Voltage

Reverse Recovery Time

Charge Time

Discharge Time

Reverse Recovery Charge

PACKAGE PARASITIC VALUES

VSD

tRR

ta

tb

QRR

VGS = 0 V,

IS = 30 A

TJ = 25°C

TJ = 125°C

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 30 A

0.87 1.1

V

0.76

21.9

11.0

ns

10.9

8.0

nC

Source Inductance

LS

Drain Inductance

Gate Inductance

LD

LG

TA = 25°C

Gate Resistance

RG

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

1.00

nH

0.005

nH

1.84

nH

1.0

2.2

W

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