STD16N50M2 データシートの表示（PDF） - STMicroelectronics

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STD16N50M2

N-channel 500 V, 0.24 Ω typ., 13 A MDmesh™ M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages

STMicroelectronics 

Electrical characteristics

Figure 14: Static drain-source on-resistance

RDS(on)

(Ω)

VGS=10V

GIPG2606141319LM

0.250

0.240

0.230

0

24

6 8 10 12 ID(A)

STD16N50M2, STF16N50M2, STP16N50M2

Figure 15: Normalized on-resistance vs. temperature

RDS(on)

(norm)

2.2

VGS=10V

GIPG2606141410LM

1.8

1.4

1

0.6

0.2

-75 -25

25

75 125 TJ(°C)

Figure 16: Output capacitance stored energy

Eoss

(µJ)

GIPG26067141339LM

4

3

2

1

0

0 100 200 300 400 500 VDS(V)

Figure 17: Source- drain diode forward

characteristics

VSD(V)

GIPG2606141300LM

1.2

1

TJ=-50°C

0.9

0.8

TJ=25°C

0.7

0.6

TJ=150°C

0.5

0 2 4 6 8 10 12 ISD(A)

8/21

DocID026641 Rev 5

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