MAGX-002731-100L00
GaN HEMT Pulsed Power Transistor
2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle
Production V1
23 Aug 11
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Symbol Min Typ
RF FUNCTIONAL TESTS Vdd=50V, Idq=500mA (pulsed), F=2.7—3.1 GHz, Pulse=500us, Duty=10%
Output Power
Pin = 7W Peak
POUT
100
105
10
10.5
Power Gain
Drain Efficiency
Load Mismatch Stability
Pout = 100W Peak, 10W Ave
Pin = 7W Peak
Pin = 7W Peak
GP
ηD
VSWR-S
11.6
47
5:1
12.6
53
-
Load Mismatch Tolerance
Pin = 7W Peak
VSWR-T 10:1
-
Max Units
-
W Peak
W Ave
-
dB
-
%
-
-
-
-
Test Fixture Impedance
F (MHz)
2700
2900
3100
ZIF (Ω)
3.5 - j7.5
2.7 - j5.3
2.0 - j4.1
ZOF (Ω)
3.4 + j0.4
4.7 - j0.8
2.5 - j1.7
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
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