STL150N3LLH5 データシートの表示（PDF） - STMicroelectronics
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STL150N3LLH5
STMicroelectronics
STL150N3LLH5 Datasheet PDF : 12 Pages
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Electrical characteristics
2
Electrical characteristics
STL150N3LLH5
(TCASE = 25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on
resistance
ID = 250 µA, VGS= 0
30
VDS = Max rating,
VDS = Max rating @125 °C
VGS = ±22 V
VDS= VGS, ID = 250 µA
1
VGS= 10 V, ID= 17.5 A
VGS= 4.5 V, ID= 17.5 A
V
1
µA
10 µA
±100 nA
1.55
2.2
V
0.0014 0.00175 Ω
0.0019 0.0024 Ω
Table 6.
Symbol
Dynamic
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
RG Gate input resistance
Test conditions
Min. Typ. Max. Unit
VDS = 25 V, f=1 MHz,
VGS=0
5800
pF
- 1147 -
pF
127
pF
VDD=15 V, ID = 35 A
VGS =4.5 V
(see Figure 14)
40
nC
- 13.4 -
nC
14.9
nC
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
- 1.1
-
Ω
open drain
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD=15 V, ID= 17.5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 13)
Min. Typ. Max. Unit
17.2
ns
30.8
ns
-
-
65.8
ns
47.8
ns
4/12
Doc ID 14092 Rev 4
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