BF1202R データシートの表示（PDF） - NXP Semiconductors.
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BF1202R Datasheet PDF : 15 Pages
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NXP Semiconductors
N-channel dual-gate PoLo MOS-FETs
Product specification
BF1202; BF1202R; BF1202WR
handbook, full pagewidth
VAGC
R1
10 kΩ
C1
4.7 nF
RGEN
50 Ω
VI
C2
R2
50 Ω
4.7 nF
RG1
VGG
C3
4.7 nF
DUT
L1
≈ 2.2 μH
C4
RL
50 Ω
4.7 nF
VDS
MGS315
Fig.21 Cross-modulation test set-up.
Table 1 Scattering parameters: VDS = 5 V; VG2-S = 4 V; ID = 12 mA; Tamb = 25 C
f
(MHz)
s11
MAGNITUDE
(ratio)
ANGLE
(deg)
s21
MAGNITUDE
(ratio)
ANGLE
(deg)
s12
MAGNITUDE
(ratio)
ANGLE
(deg)
50
0.988
3.26
2.989
176.2
0.0005
92.6
100
0.988
6.52
3.017
172.5
0.0009
88.0
200
0.984
12.99
2.990
165.0
0.0018
82.5
300
0.977
19.39
2.949
157.6
0.0027
78.2
400
0.965
25.65
2.913
150.3
0.0036
75.4
500
0.951
31.76
2.853
143.2
0.0039
71.8
600
0.936
37.68
2.793
136.3
0.0042
69.9
700
0.919
43.42
2.727
129.5
0.0044
68.9
800
0.903
48.94
2.664
123.0
0.0043
68.5
900
0.887
54.25
2.593
116.7
0.0041
70.7
1 000
0.870
59.34
2.518
110.5
0.0038
72.4
s22
MAGNITUDE
(ratio)
0.995
0.995
0.994
0.992
0.990
0.988
0.986
0.984
0.980
0.975
0.970
ANGLE
(deg)
1.50
3.01
5.95
8.86
11.79
14.65
17.41
20.10
22.69
25.27
27.90
Table 2 Noise data: VDS = 5 V; VG2-S = 4 V; ID = 12 mA; Tamb = 25 C
f
(MHz)
Fmin
opt
Rn
(dB)
(ratio)
(deg)
()
400
0.9
0.805
28.5
50
800
1.1
0.725
47.2
40
2010 Sep 16
9
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