74AHC1G32GW-Q100 データシートの表示（PDF） - NXP Semiconductors.
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74AHC1G32GW-Q100 Datasheet PDF : 13 Pages
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Nexperia
74AHC1G32-Q100; 74AHCT1G32-Q100
2-input OR gate
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions
For type 74AHCT1G32-Q100
VIH
HIGH-level VCC = 4.5 V to 5.5 V
input voltage
VIL
LOW-level VCC = 4.5 V to 5.5 V
input voltage
VOH
VOL
II
ICC
ICC
CI
HIGH-level VI = VIH or VIL; VCC = 4.5 V
output voltage IO = 50 A
IO = 8.0 mA
LOW-level VI = VIH or VIL; VCC = 4.5 V
output voltage IO = 50 A
IO = 8.0 mA
input leakage VI = 5.5 V or GND;
current
VCC = 0 V to 5.5 V
supply current VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
additional
per input pin; VI = 3.4 V;
supply current other inputs at VCC or GND;
IO = 0 A; VCC = 5.5 V
input
capacitance
25 C
40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min
Max
Min
Max
2.0 -
-
2.0 -
2.0
-
V
-
-
0.8 -
0.8
-
0.8
V
4.4 4.5 -
4.4 -
4.4
-
V
3.94 -
-
3.8 -
3.70 -
V
-
0 0.1 -
-
-
0.36 -
-
-
0.1 -
-
-
1.0 -
-
-
1.35 -
0.1
-
0.44
-
1.0
-
10
-
1.5
-
0.1
V
0.55
V
2.0
A
40
A
1.5
mA
-
1.5 10 -
10
-
10
pF
11. Dynamic characteristics
Table 8. Dynamic characteristics
GND = 0 V; tr = tf = 3.0 ns. For waveform see Figure 5. For test circuit see Figure 6.
Symbol Parameter Conditions
25 C
40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max
Min
Max
For type 74AHC1G32-Q100
tpd
propagation A and B to Y
[1]
delay
VCC = 3.0 V to 3.6 V
[2]
CL = 15 pF
-
4.4 7.9 1.0 9.5
1.0
10.0
ns
CL = 50 pF
-
6.3 11.4 1.0 13.0
1.0
14.5
ns
VCC = 4.5 V to 5.5 V
[3]
CL = 15 pF
-
3.2 5.5 1.0 6.5
1.0
7.0
ns
CL = 50 pF
-
4.6 7.5 1.0 8.5
1.0
9.5
ns
CPD
power
per buffer;
[4] -
16 -
-
-
-
-
pF
dissipation CL = 50 pF; f = 1 MHz;
capacitance VI = GND to VCC
74AHC_AHCT1G32_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 July 2012
© Nexperia B.V. 2017. All rights reserved
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