SI7463DP(2003) データシートの表示（PDF） - Vishay Semiconductors
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SI7463DP Datasheet PDF : 5 Pages
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P-Channel 40-V (D-S) MOSFET
Si7463DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.0092 @ VGS = −10 V
−40
0.014 @ VGS = −4.5 V
ID (A)
−18.6
−15
PowerPAK SO-8
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7463DP-T1—E3
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
APPLICATIONS
D Automotive
− 12-V Boardnet
− High-Side Switches
− Motor Drives
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
−40
VGS
"20
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
−18.6
−11
−15
−8.9
−60
−4.5
−1.6
5.4
1.9
3.4
1.2
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72440
S-32411—Rev. B, 24-Nov-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
18
52
1.0
Maximum
23
65
1.3
Unit
_C/W
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