SIHG47N60E データシートの表示（PDF） - Vishay Semiconductors
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SIHG47N60E Datasheet PDF : 8 Pages
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www.vishay.com
SiHG47N60E
Vishay Siliconix
24
V DS = 480 V
V DS = 300 V
20
V DS = 120 V
16
12
8
4
0
0
50
100 150 200 250 300
Qg, Total Gate Charge (nC)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
100
TJ= 150 °C
10
TJ= 25 °C
1
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1
1.2 1.4
VSD, Source-Drain Voltage (V)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
1000
Operation in this Area
Limited by RDS(on)
100
IDM Limited
10
Limited by RDS(on)*
0.1 μs
1 μs
10 μs
100 μs
1 ms
1
TC = 25 °C
TJ = 150 °C
Single Pulse
10 ms
BVDSS Limited
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Fig. 9 - Maximum Safe Operating Area
50
45
40
35
30
25
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature (°C)
Fig. 10 - Maximum Drain Current vs. Case Temperature
725
700
675
650
625
600
575
550
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 11 - Temperature vs. Drain-to-Source Voltage
S17-1097-Rev. N, 24-Jul-17
4
Document Number: 91474
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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