STF40NF06 データシートの表示（PDF） - STMicroelectronics

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STF40NF06

N-channel 60V - 0.024Ω - 23A - TO-220FP STripFET™ II Power MOSFET

STMicroelectronics 

STF40NF06

Electrical characteristics

Table 6. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=23A, VGS=0

ISD=40A,

di/dt = 100A/µs,

VDD=10V, Tj=150°C

(see Figure 15)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min Typ. Max Unit

23 A

92 A

1.3 V

63

ns

150

nC

4.8

A

5/12

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