SIHD7N60E-GE3 データシートの表示（PDF） - Vishay Semiconductors

部品番号

コンポーネント説明

メーカー

SIHD7N60E-GE3

E Series Power MOSFET

Vishay Semiconductors 

www.vishay.com

SiHD7N60E

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

RthJA

RthJC

TYP.

-

-

MAX.

62

1.6

UNIT

°C/W

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

Static

Drain-Source Breakdown Voltage

VDS Temperature Coefficient

Gate-Source Threshold Voltage (N)

Gate-Source Leakage

VDS

ΔVDS/TJ

VGS(th)

IGSS

Zero Gate Voltage Drain Current

IDSS

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Effective Output Capacitance, Energy

Related a

Effective Output Capacitance, Time

Related b

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Gate Input Resistance

Drain-Source Body Diode Characteristics

RDS(on)

gfs

Ciss

Coss

Crss

Co(er)

Co(tr)

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Rg

VGS = 0 V, ID = 250 μA

Reference to 25 °C, ID = 1 mA

VDS = VGS, ID = 250 μA

VGS = ± 20 V

VGS = ± 30 V

VDS = 600 V, VGS = 0 V

VDS = 480 V, VGS = 0 V, TJ = 125 °C

VGS = 10 V

ID = 3.5 A

VDS = 50 V, ID = 3.5 A

VGS = 0 V,

VDS = 100 V,

f = 1 MHz

VDS = 0 V to 480 V, VGS = 0 V

VGS = 10 V ID = 3.5 A, VDS = 480 V

VDD = 480 V, ID = 3.5 A,

VGS = 10 V, Rg = 9.1 Ω

f = 1 MHz, open drain

Continuous Source-Drain Diode Current

IS

MOSFET symbol

showing the

D

Pulsed Diode Forward Current

integral reverse

G

ISM

p - n junction diode

S

MIN.

609

-

2

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TYP. MAX. UNIT

-

-

V

0.68

-

V/°C

-

4

V

- ± 100 nA

-

±1

μA

-

1

μA

-

10

0.5

0.6

Ω

1.9

-

S

680

-

39

-

5

-

pF

34

-

100

-

20

40

5

-

nC

9

-

13

26

13

26

ns

24

48

14

28

1.1

-

Ω

-

7

A

-

18

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

VSD

trr

Qrr

IRRM

TJ = 25 °C, IS = 3.5 A, VGS = 0 V

TJ = 25 °C, IF = IS = 3.5 A,

dI/dt = 100 A/μs, VR = 20 V

-

-

1.2

V

-

230

-

ns

-

1.9

-

μC

-

14

-

A

Notes

a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.

b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.

S15-0291-Rev. D, 23-Feb-15

2

Document Number: 91510

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: