STL12N65M5 データシートの表示（PDF） - STMicroelectronics
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STL12N65M5
STMicroelectronics
STL12N65M5 Datasheet PDF : 17 Pages
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STL12N65M5
Electrical characteristics
Symbol
Parameter
Table 6. Switching times
Test conditions
td (v)
tr(v)
tf(i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
VDD = 400 V, ID = 6 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17),
(see Figure 20)
Min. Typ. Max Unit
- 23 - ns
- 10 - ns
- 13.5 - ns
- 13 - ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
ISD
Source-drain current
-
(1),(2)
ISDM
Source-drain current (pulsed)
-
(3)
VSD
Forward on voltage
ISD = 8.5 A, VGS = 0
-
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
-
ISD = 8.5 A, di/dt = 100 A/μs
VDD = 60 V (see Figure 17)
-
-
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
-
ISD = 8.5 A, di/dt = 100 A/μs
VDD = 60 V, Tj = 150 °C
-
(see Figure 17)
-
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area
3. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
8.5 A
34 A
1.5 V
232
ns
2
μC
17.5
A
328
ns
2.8
μC
17
A
DocID17450 Rev 4
5/17
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