Typical Characteristics
1400
1200
1000
800
600
400
200
0
0
IB = 7mA
I = 6mA
B
I = 5mA
B
I = 4mA
B
I = 3mA
B
I = 2mA
B
I = 1mA
B
2
4
6
8
10
12
14
16
18
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
I = 50 I
C
B
Ta = 25oC
1
0.1
0.01
1
10
100
1000
I [mA], COLLECTOR CURRENT
C
Figure 3. Collector-Emitter Saturation Voltage
10
IC (MAX) PULSE
IC (MAX)
1
0.1
1s
DC
T
C
=25
CoOPERATING
0.01
0.1
VCEO (MAX)
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
1000
VCE = 2V
100
10
1
10
100
1000
IC[mA], COLLECTOR CURRENT
Figure 2. DC current Gain
1400
1200
1000
800
600
400
200
0
0.0
VCE = 2V
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VBE[V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
175
Ta[oC], AMIBIENT TEMPERATURE
Figure 6. Power Derating
Rev. A2, September 2002