MPXHZ6130A6U データシートの表示（PDF） - Freescale Semiconductor

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MPXHZ6130A6U

Media Resistant and High Temperature Accuracy Integrated Silicon Pressure Sensor for Measuring Absolute Pressure, On-Chip Signal Conditioned, Temperature Compensated and Calibrated

Freescale Semiconductor 

.

Fluoro Silicone

Gel Die Coat

Wire Bond

Lead

Frame

Die

P1

Stainless

Steel Cap

Thermoplastic

Case

+5.0 V

100 nF

VS Pin 2

MPXHZ6130A

Vout Pin 4

GND Pin 3

to ADC

47 pF

51 K

Absolute Element

Sealed Vacuum Reference

Die Bond

Figure 2. Cross Sectional Diagram SOP (Not to Scale)

Figure 3. Typical Application Circuit

(Output Source Current Operation)

5.0 Transfer Function:

4.5 Vout =Vs x (0.007826 xP(kPa) - 0.07739)

4.0 +/- (PE x TM x Vs x 0.007826)

MAX

3.5 PE = +/- 1.725kPa

3.0

TM = 1 @ 0 to 85°C

Vs = 5.0Vdc

MIN

2.5

2.0

TYP

1.5

1.0

0.5

0

Pressure (ref: to sealed vacuum) in kPa

Figure 4. Output versus Absolute Pressure

Figure 4 shows the sensor output signal relative to

pressure input. Typical minimum and maximum output

curves are shown for operation over 0 to 85°C temperature

range. The output will saturate outside of the rated pressure

range.

A gel die coat isolates the die surface and wire bonds from

the environment, while allowing the pressure signal to be

transmitted to the sensor diaphragm. The gel die coat and

durable polymer package provide a media resistant barrier

that allows the sensor to operate reliably in high humidity

conditions as well as environments containing common

automotive media. Contact the factory for more information

regarding media compatibility in your specific application.

MPXHZ6130A

4

Sensors

Freescale Semiconductor

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