IRL2203NSTRLPBF データシートの表示（PDF） - International Rectifier

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IRL2203NSTRLPBF

HEXFET®Power MOSFET

International Rectifier 

IRL2203NS/LPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Symbol

V(BR)DSS

∆V(BR)DSS/∆TJ

RDS(on)

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

VGS(th)

gfs

IDSS

Gate Threshold Voltage

Forward Transconductance

Drain-to-Source Leakage Current

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Qg

Total Gate Charge

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain ("Miller") Charge

RG

Gate Resistance

td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

Min Typ Max Units

Conditions

30 ––– ––– V VGS = 0V, ID = 250µA

––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA

––– ––– 7.0

VGS = 10V, ID = 60A „

––– ––– 10

VGS = 4.5V, ID = 48A „

1.0 ––– 3.0 V VDS = VGS, ID = 250µA

73 ––– ––– S VDS = 25V, ID = 60A „

––– –––

25

µA VDS = 30V, VGS = 0V

––– ––– 250

VDS = 24V, VGS = 0V, TJ = 125°C

––– ––– 100 nA VGS = 16V

––– ––– -100

VGS = -16V

––– ––– 60

ID = 60A

––– ––– 14 nC VDS = 24V

––– ––– 33

VGS = 4.5V, See Fig. 6 and 13

0.2 ––– 3.0 Ω

––– 11 –––

VDD = 15V

––– 160 –––

ID = 60A

––– 23 –––

RG = 1.8Ω

––– 66 –––

VGS = 4.5V, See Fig. 10 „

LD

Internal Drain Inductance

LS

Internal Source Inductance

––– 4.5 –––

Between lead,

Nh 6mm (0.25in.)

––– 7.5 –––

from package

and center of die contact

Ciss

Input Capacitance

––– 3290 –––

VGS = 0V

Coss

Output Capacitance

––– 1270 ––– pF VDS = 25V

Crss

Reverse Transfer Capacitance

––– 170 –––

ƒ = 1.0MHz, See Fig. 5

EAS

Single Pulse Avalanche Energy ‚

––– 1320 … 290 † mJ IAS = 60A, L = 0.16mH

Source-Drain Ratings and Characteristics

Symbol

Parameter

Min Typ Max Units

Conditions

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

MOSFET symbol

––– ––– 116 ‡

A showing the

––– ––– 400

integral reverse

p-n junction diode.

––– ––– 1.2 V TJ = 25°C, IS = 60A, VGS = 0V „

––– 56 84 ns TJ = 25°C, IF = 60A

––– 110 170 nC di/dt = 100A/µs „

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ Starting TJ = 25°C, L = 0.16mH RG = 25Ω,

IAS = 60A, VGS=10V (See Figure 12)

ƒ ISD ≤ 60A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

„ Pulse width ≤ 400µs; duty cycle ≤ 2%.

2

… This is a typical value at device destruction and represents

operation outside rated limits.

† This is a calculated value limited to TJ = 175°C .

‡ Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 75A.

ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For

recommended footprint and soldering techniques refer to

application note #AN-994.

‰ Rθ is measured at TJ approximately 90°C

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