HV400MJ883 データシートの表示（PDF） - Harris Semiconductor

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HV400MJ883

High Current MOSFET Driver

Harris Semiconductor 

HV400MJ/883

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

This Table Intentionally Left Blank. See AC Parameter on Table 3.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Tested at: Supply Voltage = ±15V, Unless Otherwise Specified (Note 2)

PARAMETER

SYMBOL

CONDITIONS

TEMPERATURE

(oC)

MIN

MAX UNITS

Input High Current fPeak

IIHP

ISOURCE = 6A, 1µs Pulse, VIN = 9V,

VOUT = 0V

25

500

900

mA

Peak Output Current

IOP8

VIN = 9V, 1µs Pulse, VOUT = 0

25

4

8

A

Peak Output Current

IOP6

VIN = 9V, 1µs Pulse, VOUT = 0

25

25

35

A

Diode (Pin 7) Stored Charge

QRR

ID = 100mA

25

6

7

nC

Rise Time

tr

See Switching Diagram and Test Circuit

25

37

62

ns

Fall Time

tf

See Switching Diagram and Test Circuit

25

14

21

ns

Delay Time (Lo to Hi)

tDR

See Switching Diagram and Test Circuit

25

6

13

ns

Delay Time (Hi to Lo)

tDF

See Switching Diagram and Test Circuit

25

7

16

ns

Minimum Off Time

tOR

See Switching Diagram and Test Circuit

25

400 1140

ns

NOTE:

2. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-

eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization

based upon data from multiple production runs which reflect lot to lot and within lot variation.

TABLE 4. ELECTRICAL TEST REQUIREMENTS

MIL-STD-883 TEST REQUIREMENTS

SUBGROUPS (SEE TABLES 1 AND 2)

Interim Electrical Parameters (Pre Burn-In)

1

Final Electrical Test Parameters

1 (Note 3), 2

Group A Test Requirements

1, 2

Groups C and D Endpoints

1

NOTE:

3. PDA applies to Subgroup 1 only. No other subgroups are included in PDA.

3

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