TSSF4500_08 データシートの表示（PDF） - Vishay Siliconix
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TSSF4500_08 Datasheet PDF : 5 Pages
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TSSF4500
Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS
Compliant, 890 nm, GaAlAs Double Hetero
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
104
103
102
101
100
0
1
2
3
4
94 8880
V - Forward Voltage (V)
F
Fig. 3 - Forward Current vs. Forward Voltage
0° 10° 20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
94 8883 0.6 0.4 0.2
0
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
1000
100
10
tp = 0.1 ms
1
0.1
1
21440
10
100
IF - Forward Current (mA)
1000
Fig. 4 - Radiant Intensity vs. Forward Current
1.25
1.0
0.75
0.5
0.25
0
800
20082
900
λ - Wavelength (nm)
1000
Fig. 5 - Relative Radiant Power vs. Wavelength
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242
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81040
Rev. 1.6, 04-Sep-08
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